Semiconductor device structure and method for forming same
US12432944B2 · kind B2 · utility
0Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Jan 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
A semiconductor device structure and a method of forming the structure are disclosed. The semiconductor device structure includes a first capacitor and a second capacitor. The first capacitor is formed in a first redundant area, and the second capacitor is formed in a second redundant area. Since the first and second capacitors are formed in the respective redundant areas of the substrate, they will not unnecessarily occupy portions of a device area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.