Semiconductor switching device

US12432965B2 · kind B2 · utility

Assignee

• GE Aviation Systems Limited · GB

Inventors

• Collin William Hitchcock · Clifton Park, US
• Stacey Joy Kennerly · Niskayuna, US
• Ljubisa D. Stevanovic · Clifton Park, US

Key dates

• Filing date: Feb 10, 2023
• Grant date: Sep 30, 2025
• Expiry date: Apr 4, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/252

Abstract

A semiconductor device cell includes a semiconductor layer having a surface defining a series of parallel striations extending in a first direction. The semiconductor layer surface has a lower electrical resistance in the first direction than in a second direction orthogonal to the first direction. A channel region defines a set of first channel region segments extending in the first direction, and a set of second channel region segments extending in the second direction. The first channel region segments and the second channel region segments are arranged to maximize portions of the channel region extending in the first direction across the surface, and minimize portions of the channel region extending in the second direction, to reduce or minimize the effective electrical resistance of the channel region in operation.