Gate dielectric for thin film oxide transistors
US12432979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2021 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Feb 1, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6728
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor (TFT) structure. In an example, the TFT includes a gate electrode, a first layer comprising an oxide semiconductor material, and a second layer between the first layer and the gate electrode. The second layer is crystalline and is in contact with the first layer, and includes zirconium and oxygen. The TFT includes a first contact coupled to the first layer at a first location, and a second contact coupled to the first layer at a second location. In some cases, the second layer further includes hafnium. In some cases, the TFT includes a third layer between of the gate electrode and the second layer, the third layer comprising a metal and oxygen. The gate electrode may also include the metal. In some cases, hydrogen is present at an interface between the gate electrode and the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.