Semiconductor device including substrate layer with floating base region and gate driver circuit

US12432988B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Christian Schippel · Dresden, DE
• Dirk Priefert · Moers, DE
• Felix Simon Winterer · Munich, DE
• Remigiusz Viktor Boguszewicz · Essen, DE

Key dates

• Filing date: Feb 16, 2023
• Grant date: Sep 30, 2025
• Expiry date: Apr 6, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/112

Abstract

A semiconductor device includes a substrate layer having a floating base region of a first conductivity type. A first well of a second conductivity type and the floating base region form a first pn junction. A first conductive structure is electrically connected to the first well. A barrier region of the second conductivity type and the floating base region form an auxiliary pn junction. A second conductive structure is electrically connected to the floating base region through a rectifying structure. A pull-down structure is configured to produce a voltage drop between the barrier region and the second conductive structure, when charge carriers cross the auxiliary pn junction.