Semiconductor device and method for manufacturing the same
US12432999B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2023 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Mar 26, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/514
Abstract
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode; a fourth electrode, a semiconductor member, a first conductive member, a second conductive member, and an insulating member. The semiconductor member includes first, second and third semiconductor regions. The first semiconductor region includes a first outer edge region, a first partial region, a second partial region, a third partial region, and a fourth partial region. The first, third and fourth partial regions are of a first conductivity type. The second semiconductor region is of a second conductivity type. The third semiconductor region is of the first conductivity type. The second conductive member includes a first conductive portion. The insulating member includes a first insulating region and a second insulating region. An electrical resistivity of the second partial region is higher than an electrical resistivity of the first partial region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.