Semiconductor device and method of manufacture
US12433001B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Jun 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/615
Abstract
A semiconductor device is provided, including a substrate having a first epitaxial layer arranged thereon and a voltage blocking element arranged in the first epitaxial layer, a second epitaxial layer arranged on the first epitaxial layer, and a vertical switching element arranged in the second epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.