Composite etch stop layers for sensor devices

US12433059B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Cheng-Han Lin · Taoyuan, TW
• Chao-Ching Chang
• Yi-Ming Lin · Taichung, TW
• Yen-Ting Chou · Tainan, TW
• Yen-Chang Chen · Taipei, TW
• Sheng-Chan Li · Tainan, TW
• Cheng-Hsien Chou · Tainan, TW

Key dates

• Filing date: Jul 18, 2023
• Grant date: Sep 30, 2025
• Expiry date: Apr 1, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/413

Abstract

A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating. wherein the composite etch stop mask layer includes a silicon nitride layer and a stressed layer. A percentage of Si—H bonds in the silicon nitride layer is greater than a percentage of Si—H bonds in the stressed layer.