Method and device for photosensor using graded wavelength configuring materials
US12433061B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Feb 21, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/1272
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and device for a sensor using a graded wavelength configuring material. The wavelength configuring material can be configured for a selected wavelength using plurality of material regions of varying elemental concentrations in a continuous or step-wise pattern. The material compositions can include InP, InGaAs, GaAs, GaP, InGaAsP, InAs, InAlAs, InAlGaAs, InGaP, and the like. Further, the interface regions between adjacent material regions can be free from smearing of compositions. These material regions can also form a strained graded region overlying a buffer material and a silicon substrate. An array of photodetector materials can be formed overlying the wavelength configuring material. These materials can include an n-type material, an absorption material, a band transition material, and a p-type material, among others. The resulting device exhibits high performance at the selected wavelength and is characterized by low dislocation density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.