LED with ALGAINP window layer

US12433068B2 · kind B2 · utility

Assignee

• QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD · CN

Inventors

• Huiwen Li · Sunnyvale, US
• Dongyan Zhang · Tianjin, CN
• Kuanfu PAN · Tianjin, CN
• Shaohua Huang · Fujian, CN
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Sep 24, 2021
• Grant date: Sep 30, 2025
• Expiry date: Jul 13, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8316

Abstract

A semiconductor light-emitting device includes a semiconductor light-emitting sequence which includes a first conductive type semiconductor layer, a second conductive type semiconductor layer and a light-emitting layer therebetween, a first electrode electrically connected to the first conductive type semiconductor layer, and a second electrode electrically connected to the second conductive type semiconductor layer. The first conductive type semiconductor layer includes an aluminum gallium indium phosphorus window layer as an ohmic contact layer forming contact between the first electrode and the first conductive type semiconductor layer.