Patent · US Active

Optoelectronic devices and methods of making the same

US12433148B2 · kind B2 · utility

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2References
15Claims
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Key dates

Filing dateDec 15, 2022
Grant dateSep 30, 2025
Priority date
Expiry dateJun 14, 2044

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/549

Abstract

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.