Spin-orbit readout using transition metal dichalcogenides and proximitized graphene
US12433172B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Mar 30, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Feb 1, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/18
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one embodiment, an integrated circuit die includes: a first layer comprising a magnetoelectric material; a second layer comprising a monolayer transition metal dichalcogenide (TMD); a magnet between the first layer and the second layer, wherein the magnet has perpendicular magnetic anisotropy; a first conductive trace coupled to the first layer; and a second conductive trace coupled to the magnet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.