Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth
US3930909A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1974 |
| Grant date | Jan 6, 1976 |
| Priority date | — |
| Expiry date | Nov 26, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/673
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device is described in which opposite-type impurities are introduced into the same surface of a substrate in such manner that the region of impurities of the opposite-type to that of the substrate overlaps completely the other substrate surface region. Then an epitaxial layer is grown on the surface of the substrate. There is thus formed two buried layers of which the one with the same type conductivity of the substrate is completely separated and isolated from the latter by the buried layer of opposite-type conductivity. Methods are also described for the manufacture of complementary bipolar transistors, in which the pnp type is made by the above described method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.