Sputtering method for producing solder-fast copper layers
US3930975A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1974 |
| Grant date | Jan 6, 1976 |
| Priority date | — |
| Expiry date | Oct 10, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/16
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Copper is sputtered onto a substrate to make a solder-fast contact layer by carrying out the sputtering in a discharge of a monatomic gas containing 0.5 to 16% of air, nitrogen or oxygen which reduces the conductivity of the copper layer, but makes it resistant to alloying with a solution in solder, to an extent comparable with the results obtained by the provision of intermediate diffusion barrier layers. Best results are obtained in an argon discharge in the presence of an admixture of nitrogen or air between 2 and 4% by volume. The solder-wetting properties are not impaired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.