Method and apparatus for production of liquid phase epitaxial layers of semiconductors
US3933538A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 1973 |
| Grant date | Jan 20, 1976 |
| Priority date | — |
| Expiry date | Jan 10, 1993 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Single-crystal epitaxial layers of compound semiconductors or mixed semiconductors are grown on suitable substrates from the liquid phase, which consists of a molten metallic solvent dissolving a source material of the semiconductors, and within which the temperature gradient is produced so that in a high temperature region of the liquid solution a solid source material is dissolving into the liquid solution with at least a portion of the solid source material always at an undissolved state and in a low temperature region of the liquid solution an epitaxial layer is depositing onto the substrate, the temperatures in the liquid solution being kept constant during the epitaxial growth. Each substrate is positioned in one of a number of slots which are provided in the upper surface of a slider and it is successively transferred with the slider to contact with the liquid solution. The composition and/or the doping level of each epitaxial layer are controlled by the composition and/or the doping level of the solid source material which is selected from a pre-synthesized material, i.e., a solid film produced on the liquid solution by supersaturation and a film deposited on the liquid sol…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.