Process for production of polycrystalline silicon
US3933985A · kind A · utility
31Cited by
7References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 24, 1971 |
| Grant date | Jan 20, 1976 |
| Priority date | — |
| Expiry date | Sep 24, 1991 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
There is disclosed a process for the hydrogen reduction of silicon tetrachloride to produce trichlorosilane. In accordance with the process, hydrogen and silicon tetrachloride vapors are passed through a reaction chamber at relatively high flow rates with approximately 50 mole percent silicon tetrachloride in the mixture. The reaction vessel is held at a temperature of between 900.degree. and 1200.degree. C. This process is a part of an overall system for the production of polycrystalline silicon for the semiconductor industry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.