Method of improving the radiation resistance of silicon transistors with a silicon oxide coating
US3935033A · kind A · utility
3Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1973 |
| Grant date | Jan 27, 1976 |
| Priority date | — |
| Expiry date | Nov 15, 1993 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/953
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The radiation resistance of silicon transistors with a silicon oxide coating is improved by irradiating the semiconductor device with electrons at an energy below 150 keV and a dose between 10.sup.9 and 10.sup.12 rad at the boundary layer between the silicon and silicon oxide coating. The temperature of the semiconductor device is maintained at a temperature of between 150.degree. and 450.degree.C during irradiation thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.