Method of manufacturing a green light-emitting gallium phosphide device
US3935039A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1974 |
| Grant date | Jan 27, 1976 |
| Priority date | — |
| Expiry date | Apr 3, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02628
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a green light-emitting gallium phosphide device which comprises the steps of preparing a liquid-phase epitaxial solution of one conductivity type containing a high concentration of nitrogen at a higher temperature than 1000.degree.C; bringing said epitaxial growth solution now cooled to 600.degree.C to 1000.degree.C into contact with a gallium phosphide substrate of the same conductivity type as said solution; cooling said epitaxial growth solution to form a liquid-phase epitaxial layer on said substrate; and forming a region in close proximity to said liquid-phase epitaxial layer with the opposite conductivity type thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.