High power, high frequency bipolar transistor with alloyed gold electrodes
US3935587A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 1974 |
| Grant date | Jan 27, 1976 |
| Priority date | — |
| Expiry date | Aug 14, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/135
Abstract
A bipolar transistor is provided with both high voltage and high frequency capabilities. A semiconductor body of a resistivity between 10 and 100 ohm-cm forms the collector region of the transistor and has an epitaxial semiconductor layer grown on a major surface thereof of a resistivity between about 0.5 and 10 ohm-cm and of a thickness between about 20 and 100 microns and of a conductivity type opposite from the body. At least one emitter region and integral emitter electrode are alloyed into the epitaxial layer preferably in annular rings. A base region is formed in the epitaxial layer between the emitter and semiconductor body and around the emitter region, said base region having a minimum thickness between the emitter region and the semiconductor body in the interior of the body of less than 20 and preferably between 5 and 10 microns. Base electrodes are alloyed into the epitaxial layer preferably spaced from the emitter region and emitter electrode preferably in concentric annular rings and a center circular member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.