Light-emitting diode fabrication process
US3936855A · kind A · utility
19Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 1974 |
| Grant date | Feb 3, 1976 |
| Priority date | — |
| Expiry date | Aug 8, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30612
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure are provided for the simplified batch fabrication of Gallium Arsenide-Aluminum Gallium Arsenide lightemitting diodes. A high aluminum content AlGaAs layer is formed on the GaAs substrate layer to provide an etch resistant mask, and an etchant is employed which preferentially etches the GaAs. This permits simultaneous etching of the substrate to form a plurality of like devices on a common semiconductor wafer in a repeatable low-cost batch process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.