Fabrication of a semiconductor device
US3936860A · kind A · utility
Inventor
Key dates
| Filing date | Dec 23, 1974 |
| Grant date | Feb 3, 1976 |
| Priority date | — |
| Expiry date | Dec 23, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor material of a first conductivity type has one of its surfaces subjected to high energy oxygen ion implantation, thereby forming an oxide layer below that surface. A gate is formed by masking at least a portion of the surface, exposing the unmasked portion to ion radiation so as to implant impurity ions in the region of the semiconductor material between its unmasked surface and the upper side of the subsurface oxide layer, and metallizing the surface above the implanted region. After removal of the masking material, source and drain areas are formed by high energy ion implantation in the semiconductor material adjacent the lower side of the subsurface oxide layer, the areas having a conductivity opposite the first conductivity type. After windows to the source and drain areas are opened in the semiconductor material and subsurface oxide layer, the exposed surfaces of these areas are metallized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.