Charge-coupled device and method of fabrication of the device
US3936861A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 1974 |
| Grant date | Feb 3, 1976 |
| Priority date | — |
| Expiry date | Mar 12, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/335
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A charge-coupled device in which the storage and tranfer of information in the form of charges consisting of minority carriers are carried out with only two clocks. The device comprises a doped semiconductor substrate coated with an insulating thin film carrying a linear series of conductive electrodes. A variably doped surface region of the substrate creates a potential barrier for the minority carriers upstream of a charge-storage region. The same value of potential is fixed respectively for the odd-numbered electrodes and for the even-numbered electrodes, these values being modified in cycles so as to transfer the charge from each alternate electrode to one of the adjacent electrodes. A method of fabrication of the device consists in forming an insulating film and an assembly of conductive electrodes on a semiconductor substrate and in ion implantation by means of an ion beam in order to increase the doping of the substrate beneath one edge of the electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.