Diaphragm formation on silicon substrate
US3941629A · kind A · utility
54Cited by
3References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 11, 1974 |
| Grant date | Mar 2, 1976 |
| Priority date | — |
| Expiry date | Apr 11, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of making thin diaphragms having an accurately controllable thickness for semiconductor pressure responsive devices. An oxide coating is thermally grown in selected regions on the front side of a silicon wafer. The oxide extends into the wafer at an extremely accurate and controllable depth to form a groove in the wafer front side defined by the selected regions. Portions of the wafer are then etched from the back side until the bottom of the groove is reached thereby providing a diaphragm having a thickness equal to the accurately reproducible depth of the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.