Semiconductor element
US3942244A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 1974 |
| Grant date | Mar 9, 1976 |
| Priority date | — |
| Expiry date | May 24, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12036
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor electrode is prepared by (a) contacting a semiconductor w a first contacting metal (capable of forming an alloy with the semiconductor), (b) contacting the first contacting metal with a ductile layer of a second contacting metal, (c) heating the resulting combination so as to form, simultaneously, a liquid phase between the semiconductor and the first contacting metal and between the first contacting metal and the ductile second contacting metal, however leaving intact a major portion of the ductile second contacting metal layer, and (d) cooling the thus obtained product whereby a solder contact which is resistant to load fluctuations can be readily made on the ductile layer with known semiconductor hard solder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.