Patent · US Expired

Semiconductor element

US3942244A · kind A · utility

3Cited by
4References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 24, 1974
Grant dateMar 9, 1976
Priority date
Expiry dateMay 24, 1994

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/12036
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor electrode is prepared by (a) contacting a semiconductor w a first contacting metal (capable of forming an alloy with the semiconductor), (b) contacting the first contacting metal with a ductile layer of a second contacting metal, (c) heating the resulting combination so as to form, simultaneously, a liquid phase between the semiconductor and the first contacting metal and between the first contacting metal and the ductile second contacting metal, however leaving intact a major portion of the ductile second contacting metal layer, and (d) cooling the thus obtained product whereby a solder contact which is resistant to load fluctuations can be readily made on the ductile layer with known semiconductor hard solder.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.