Selective removal of material by sputter etching
US3943047A · kind A · utility
14Cited by
9References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 1974 |
| Grant date | Mar 9, 1976 |
| Priority date | — |
| Expiry date | May 10, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
During the removal of material selectively, by the sputter etching of the surface of a semiconductor wafer, the wafer is moved so as to produce a continuously varying angle of incidence between the ion beam and the wafer surface. There is also provided a field-free region adjoining the surface of the wafer which is being etched. As a consequence, the sputtering beam strikes the wafer surface over a range of angles which results in more complete removal of material, particularly material overlying stepped portions of the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.