Method of manufacturing shaped hollow bodies
US3943218A · kind A · utility
16Cited by
4References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1973 |
| Grant date | Mar 9, 1976 |
| Priority date | — |
| Expiry date | Jun 14, 1993 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/01
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing shaped hollow semiconductor members, as of silicon or silicon carbide by depositing a select semiconductor material from a gaseous compound onto a heated graphite substrate which is first heat-treated above 1300.degree. C. in a flowing gas atmosphere, preferably a mixture of H.sub.2 and SiHCl.sub.3 so as to modify the surface characteristics of the substrate whereby the deposited semiconductor material does not interact with the substrate so that the substrate may be reused.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.