Application of facet-growth to self-aligned Shottky barrier gate field effect transistors
US3943622A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1974 |
| Grant date | Mar 16, 1976 |
| Priority date | — |
| Expiry date | Oct 22, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/944
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and particularly a self-aligned Schottky barrier gate field-effect transistor is made by epitaxial growth of facets corresponding to the source and drain regions on a surface of a semiconductor body through spaced apart preferably elongated windows in a masking layer and overgrowing edge portions of the masking layer at the windows to form overgrown portions on the facets. The channel region of the transistor is previously formed in the semiconductor body, preferably by epitaxial growth of a layer on a surface of a semiconductor body having a semi-insulating layer adjoining the surface. After removal of the masking layer, the Schottky barrier gate is self-aligned by deposition of metal on the unshielded portions of the planar surface between the facets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.