Microwave solid state circuit employing a bipolar transistor structure
US3946336A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1975 |
| Grant date | Mar 23, 1976 |
| Priority date | — |
| Expiry date | Feb 26, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03B9/12
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This microwave circuit incorporates a transistor structure that provides either a two port amplifier or an injection frequency locked oscillator. This circuit eliminates circulators employed with Gunn and Impatt diode amplifiers and injection frequency locked oscillators. The collector-base junction is reverse biased so that the collector region functions either in the Impatt mode or in the transferred electron mode. An RF input signal is applied across the forward biased emitter-base junction. With a load across the collector-base junction having a conductance equal to the absolute value of the negative conductance generated by the collector region, the circuit functions as an oscillator at a frequency which is injection locked to the frequency of the input signal. With a load of increased conductance to suppress oscillations, i.e. overload the collector region, the circuit functions as an amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.