Normally off schottky barrier field effect transistor and method of fabrication
US3946415A · kind A · utility
3Cited by
5References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 28, 1974 |
| Grant date | Mar 23, 1976 |
| Priority date | — |
| Expiry date | Aug 28, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A normally-off field effect transistor having the structure of an IGFET with a substantially undoped semiconductor material replacing the insulation between the substrate and the gate metal. A Schottky barrier formed between the gate metal and the substantially undoped semiconductor material produces a channel in the substrate when reverse biased. Method of fabrication is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.