Preparation of indium phosphide

US3947549A · kind A · utility

Assignee

• British Secretary of State for Defence

Inventors

• Peter Born · Sandhausen, DE
• Daniel S. Robertson · Worcester, GB

Key dates

• Filing date: Mar 12, 1974
• Grant date: Mar 30, 1976
• Expiry date: Mar 12, 1994

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S420/903
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A method of preparing III-V material which is or contains one of the compounds aluminum nitride, indium nitride, indium phosphide, gallium phosphide and gallium nitride involves directing a controlled gaseous flow of a hydride of nitrogen or phosphorus as appropriate, preferably ammonia or phosphine, into the vapour of a halide, preferably a chloride, of aluminum, indium or gallium as appropriate at a temperature below the decomposition temperature of the appropriate III-V material and collecting the III-V material formed by the reaction of the hydride and the halide.