Method of encapsulating beam lead semiconductor devices
US3947952A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1974 |
| Grant date | Apr 6, 1976 |
| Priority date | — |
| Expiry date | Jul 15, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01029
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Plastic encapsulation in the form of a thin film of silicone resin is provided on the active surface of beam lead semiconductor chips by a multistep process. An etchable organic film, for example, of silicone resin, is applied to the chips while they are still in wafer form. A mask is formed on top of the resin having a pattern conforming to the underlying semiconductor chips. The exposed resin overlying the intervening beam lead grid portion is then dissolved, after which the mask is removed. The final step is the standard wafer separation which leaves each semiconductor chip with a thin silicone resin coating over the active surface thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.