Patent · US Expired

Method of making high speed silicon switching diodes

US3949120A · kind A · utility

3Cited by
3References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 19, 1973
Grant dateApr 6, 1976
Priority date—
Expiry dateOct 19, 1993

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D99/00
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

To decrease the lifetime of minority carriers and thus increase switching speed, gold is diffused into a silicon body, the gold being applied by first electroless applying a nickel layer to a single crystal silicon to activate the silicon for reception of gold; and then, electroless applying the gold layer over the silicon layer. In accordance with a preferred process, the electrolessly applied nickel layer is sintered, a second nickel layer is applied thereover and the gold then applied over the second additional nickel layer. A further layer of nickel can be applied electrolessly, over which gold is applied to form a contact surface to which a contact wire can be soldered or fused.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.