Method of manufacturing a gallium phosphide light-emitting device
US3951700A · kind A · utility
6Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1974 |
| Grant date | Apr 20, 1976 |
| Priority date | — |
| Expiry date | Aug 16, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a gallium phosphide light-emitting device which characteristically comprises the step of growing a gallium phosphide layer of one conductivity type on a gallium phosphide substrate of the opposite conductivity type at a growth initiating temperature of 650.degree. to 850.degree.C by the liquid phase epitaxy process to provide a p-n junction contributing to emission of light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.