System for controlling the threshold setting of a field effect memory device
US3952211A · kind A · utility
1Cited by
6References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 3, 1974 |
| Grant date | Apr 20, 1976 |
| Priority date | — |
| Expiry date | May 3, 1994 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0466
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatus and system for controlling the gate threshold settings of MNOS memory devices is disclosed. Positive or negative pulses depending on turn-on or turn-off of relatively large amplitude and relatively low frequency are applied to the gate of the MNOS device whose threshold is to be set and to whose gate a bias value equal to the desired setting has been applied. A feed back circuit, in response to the change in current conduction condition of the test MNOS device caused by the application of the pulses, reduces the magnitude of the pulses to a low value as the gate threshold value reaches the desired set value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.