Semiconductor memory elements
US3952325A · kind A · utility
69Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1972 |
| Grant date | Apr 20, 1976 |
| Priority date | — |
| Expiry date | Jul 26, 1992 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory element comprising a semiconductor substrate and an insulating layer thereon, a charge storage element located on a portion of the insulating layer and separated from the semiconductor substrate, and first device means for injecting hot electrons from the semiconductor substrate into the insulating layer portion to write a first charge state on the charge storage element and second device means for injecting hot holes from the semiconductor substrate into the insulating layer portion to write a second charge state on the charge storage element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.