Patent · US Expired

Method for setting the lifetime of charge carriers in semiconductor bodies

US3953243A · kind A · utility

10Cited by

4References

10Claims

0Family size

Assignee

Licentia Patent-Verwaltungs-GmbH · DE

Inventors

Adolf Goetzberger · Freiburg im Breisgau, DE
Max Schulz
Alois Sonntag · Warstein, DE

Key dates

Filing date	Aug 12, 1974
Grant date	Apr 27, 1976
Priority date	—
Expiry date	Aug 12, 1994

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/023
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of setting the lifetime of charge carriers in a semiconductor body by the formation of recombination centers in the semiconductor body. The quantity of the recombination centers forming material necessary to provide the desired concentration in the semiconductor body is applied to the surface of the semiconductor body and into the surface thereof by ion implantation, and thereafter, in order to diffuse the material into the semiconductor body, the body is heated until an approximately stationary value for the charge carrier lifetime has developed in the entire volume of the body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.