Method of forming light emitting diode array with dome geometry
US3954534A · kind A · utility
45Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1974 |
| Grant date | May 4, 1976 |
| Priority date | — |
| Expiry date | Oct 29, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/15
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure for providing arrays or individual hemispherical diodes and methods of producing the diodes. When the diode array is to be part of a configuration utilizing a substrate, the substrate is selected to have radiation transparency, a lower refractive index, and lattice constant and lattice structure similar to that of a crystal layer grown in hemispheres formed in the substrate. When the diode array is to be removed from the substrate, a material that can be preferentially etched is grown between the hemispheres formed in the substrate and the grown crystal layer that is to have light emitting areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.