Aluminum tantalum layers for electronic devices
US3955039A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1973 |
| Grant date | May 4, 1976 |
| Priority date | — |
| Expiry date | Oct 19, 1993 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N97/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Al-Ta alloy films containing 2 to 20 atomic % of Ta in Al exhibit an improved temperature stability. An Al-alloy film containing 7 atomic % of Ta has a resistivity of 60.mu..OMEGA. cm, a temperature coefficient of resistance of +100 ppm.degree./K and a sparking potential of about 400 V when anodizing in 0.1% H.sub.3 PO.sub.4. An Al-alloy film containing 15 atomic % of Ta has a specific resistance of 200.mu..OMEGA. cm, a temperature coefficient of resistance of -100 ppm.degree./K and a sparking potential of about 300 V when anodizing in 0.1% H.sub.3 PO.sub.4. The alloy films are applied on a non-conductive substrate, as by RF-cathode sputtering in a desired thickness and are useful for thin-film circuits, discrete resistors, capacitors, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.