Method of forming semiconductor layers by vapor growth
US3956037A · kind A · utility
12Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 11, 1974 |
| Grant date | May 11, 1976 |
| Priority date | — |
| Expiry date | Apr 11, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/916
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a second semiconductor layer on a first semiconductor layer by vapor growth is disclosed. The two semiconductor layers are of the same conduction type but have different impurity concentrations. In the forming process, a doping gas is supplied before the vapor growth of the second semiconductor layer is started whereby a steep impurity distribution is established in the vapor-growth boundary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.