Variable stripe width semiconductor laser
US3959808A · kind A · utility
5Cited by
3References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 19, 1974 |
| Grant date | May 25, 1976 |
| Priority date | — |
| Expiry date | Sep 19, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A variable stripe width semiconductor laser is provided in which, in addition to the contact stripe and back contact, a third contact is provided. By applying a positive bias to the third contact the current spread in the device is reduced, increasing the effective current density at the lasing position. By varying, or pulsing, the applied position bias the current density can be caused to vary above and below a threshold and switch the laser on and off. Further, by application of a suitable positive bias, unwanted higher order modes can be eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.