High-voltage semiconductor integrated circuit
US3959812A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 26, 1974 |
| Grant date | May 25, 1976 |
| Priority date | — |
| Expiry date | Feb 26, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-voltage semiconductor integrated circuit consists of an N.sup.- -type substrate, a P.sup.+-type diffusion layer formed on the surface region of the substrate, an N.sup.+-type diffusion layer formed on the P.sup.+-type diffusion layer, and an N.sup.--type epitaxial layer formed on the substrate, forming a high voltage-proof transistor against voltage more than one thousand and several hundred volts. Also, an N.sup.- substrate (collector), N.sup.+-type diffusion layer, and N.sup.+-type diffusion layer, are integrated therewith to form a low-voltage-proof transistor, diode, and PNPN diode in the epitaxial layer so that the entire circuit may take the form of a high voltage-proof power component plus a low voltage-proof control circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.