Epitaxial growth process for compound semiconductor crystals in liquid phase
US3960618A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1975 |
| Grant date | Jun 1, 1976 |
| Priority date | — |
| Expiry date | Mar 25, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/955
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an epitaxial growth process for compound semiconductor crystals in a liquid phase, a substrate crystal is brought into contact with an etching solution containing as solute a predetermined amount of at least one constituent of the substrate crystal, which is smaller than that of a saturated solution, after heating them at a temperature for crystal growth. The substrate crystal is kept in contact with the solution during a period of time sufficient to remove a surface portion of the substrate crystal. Then the substrate crystal is brought into contact with a solution for crystal growth containing a substance to be grown as solute and a crystal of the substance is grown epitaxially on an exposed clean surface of the substrate crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.