Mesa type thyristor and its making method
US3961354A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1973 |
| Grant date | Jun 1, 1976 |
| Priority date | — |
| Expiry date | Nov 19, 1993 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method of manufacturing a mesa type thyristor includes the formation, onto at least one face of a semiconductor substrate of a prescribed conductivity type of a ring or rings, of a deeply diffused region of the same conductivity type or that of the substrate but of a higher impurity concentration. As a result, the ring or rings of the deeply diffused region, surrounding the essential part of the thyristor, are, subsequent to the process of mesa-etching, exposed along the peripheral surface linking both faces of the substrate. The high-doped ring serves to effectively prevent an undesirable inducing of an inversion layer (i.e. channel region) across both surfaces of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.