Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming
US3961355A · kind A · utility
24Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1974 |
| Grant date | Jun 1, 1976 |
| Priority date | — |
| Expiry date | Nov 18, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a heavily doped semiconductor substrate with a lightly doped epitaxial layer overlying a surface of the substrate and of the same conductivity type as the substrate. Electrically insulating barriers extend from at least the surface of the epitaxial layer into the substrate so as to electrically isolate non-common areas of each surface leakage sensitive device within the epitaxial layer from the non-common areas of adjacent surface leakage sensitive devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.