Glass-ceramics for semiconductor doping
US3961969A · kind A · utility
7Cited by
3References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 23, 1974 |
| Grant date | Jun 8, 1976 |
| Priority date | — |
| Expiry date | Dec 23, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S252/951
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed is a method for diffusion doping of silicon and germanium semiconductors by the vapor phase transport of B.sub.2 O.sub.3 from a solid B.sub.2 O.sub.3 source to the semiconductor, wherein the solid B.sub.2 O.sub.3 source comprises a rigid, dimensionally stable, glass-ceramic body formed from certain alkaline earth aluminoborosilicate parent glass compositions. The glass-ceramic bodies contain up to 60 mole % of B.sub.2 O.sub.3 and are dimensionally stable at doping temperatures of 1050.degree.C and higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.