Process of producing semiconductor laser device
US3961996A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1974 |
| Grant date | Jun 8, 1976 |
| Priority date | — |
| Expiry date | Oct 17, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/145
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
N type Ga.sub.0.7 Al.sub.0.3 As, N type GaAs, N type Ga.sub.0.7 Al.sub.0.3 As and P type Ga.sub.1-0.3 Al.sub.0.3 As are epitaxially grown on an N type GaAs substrate in the named order one after another to form superposed layers. A selected portion of the uppermost layer is etched away along with those portions of the following two layers and one part of the lowermost layer located below the selected uppermost layer portion. P type Ga.sub.1-0.3 Al.sub.0.3 As highly doped with zinc is epitaxially grown to fill the removed portions of the layers. Then the zinc is diffused into the adjacent portions of the layers to form a radiative recombination region of a layer on that portion of the GaAs layer converted to the P type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.