Barium aluminoborosilicate glass-ceramics for semiconductor doping
US3962000A · kind A · utility
5Cited by
6References
7Claims
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Inventor
Key dates
| Filing date | Dec 20, 1974 |
| Grant date | Jun 8, 1976 |
| Priority date | — |
| Expiry date | Dec 20, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S252/951
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed is a method for diffusion doping of silicon and germanium semiconductors by the vapor phase transport of B.sub.2 O.sub.3 from a solid B.sub.2 O.sub.3 source to the semiconductor, wherein the solid B.sub.2 O.sub.3 source comprises a rigid, dimensionally stable, glass-ceramic body formed from certain barium aluminoborosilicate parent glass compositions which in mole percent consist essentially of over 40 and up to 60 SiO.sub.2, 10 to 30 Al.sub.2 O.sub.3, 20 to 40 B.sub.2 O.sub.3 and 3 to 20 alkaline earth oxides including 1 to 15 BaO.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.