Pattern definition in an organic layer
US3962004A · kind A · utility
337Cited by
3References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 29, 1974 |
| Grant date | Jun 8, 1976 |
| Priority date | — |
| Expiry date | Nov 29, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method of defining a pattern in a layer of organic material includes depositing a relatively thin layer of silicon dioxide on the layer of organic material, applying to the silicon dioxide layer a film of primer solution comprising a silane derivative, and then forming a photoresist etch mask on the film. By utilizing an ultrasonic etch bath, a uniform and well-defined pattern is etched in the layer of organic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.