Methods of producing gallium phosphide yellow light emitting diodes

US3964940A · kind A · utility

Assignee

• Plessey Handel Und Investments AG · CH

Inventors

• Peter B. Hart · Northampton, GB
• Ralph Nicklin

Key dates

• Filing date: Jun 27, 1974
• Grant date: Jun 22, 1976
• Expiry date: Jun 27, 1994

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/14

Abstract

A method of producing a gallium phosphide yellow light emitting diode which includes the steps of providing a single crystal gallium phosphide substrate; growing from a hydride vapour phase a single crystal layer of nitrogen doped gallium phosphide of the same conductivity type as the substrate on a surface of the substrate such that the nitrogen content of the layer is greater than 10.sup.19 atoms/cc, the actually nitrogen content determining the wavelength of the light that can be emitted; forming at least one p-n junction with the nitrogen doped gallium phosphide layer; and forming an electrically conductive contact on each side of the p-n junction.