Semiconductor device having controlled surface charges by passivation films formed thereon
US3967310A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1973 |
| Grant date | Jun 29, 1976 |
| Priority date | — |
| Expiry date | Nov 30, 1993 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After desired impurities are diffused into a semiconductor substrate through a masking layer of SiO.sub.2 formed thereupon so as to form a semiconductor device, the masking layer is completely removed therefrom and thereafter more than two thin layers of different insulating materials are deposited upon the cleaned surface of the semiconductor device thus providing a method of forming a semiconductor device with an improved passivation film thereon. Said insulating materials are selected from the group consisting of silicon dioxide, a silicon nitride, alumina, boro-silicate glass, phospho-silicate glass, alumino-silicate glass, alumino-phospho-silicate glass and alumino-boro-silicate glass, and the thickness of each thin layer is in the range of 300 to 1500 angstroms and the first layer is silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.