Method of manufacturing low power loss semiconductor device
US3968019A · kind A · utility
11Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1975 |
| Grant date | Jul 6, 1976 |
| Priority date | — |
| Expiry date | Mar 21, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2633
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
By forming a metallic coating on a sufficiently cleaned semiconductor substrate through ion plating, a low power loss and high switching speed semiconductor device is obtained which differs from an ordinary semiconductor device with a diffused junction. In an interface between the metallic coating and the semiconductor substrate, a considerably thin metal-injected layer is formed toward the semiconductor substrate. Schottky barrier devices may be formed by the method of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.